Voids in phase change memory Nanodevices

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dc.contributor.advisorDr. Nafisa Noor
dc.contributor.authorZahin Tazwar
dc.contributor.authorMusfiq Ahmed
dc.contributor.authorToufiq Mohammad Hassan
dc.contributor.id1921486643
dc.contributor.id1921162643
dc.contributor.id2022329643
dc.coverage.departmentElectrical and Computer Engineering
dc.date.accessioned2025
dc.date.accessioned2025-07-21T05:04:52Z
dc.date.available2025-07-21T05:04:52Z
dc.date.issued2023
dc.description.abstractAn experimental and Finite Element Model (FEM) approach has been taken in this study to predict and model the formation of voids in melt-quenched or as-deposited amorphous Ge2Sb2Te5 and Silicon during annealing. This study includes the thermal models that account for laser heating of the nanostructures during device production, as well as the void generation with crystal nucleation and growth. Furthermore, the framework is put through various sets of simulations involving set/reset operations, set/reset cycles, in a mushroom cell with temperature and crystallinity dependent parameters for Ge2Sb2Te5. The contrast in resistance due to void formation is analyzed both mathematically and also in simulation using Si nanostructure. Finally, various aspects of impacts and sustainability is reflected at the end of this report.
dc.description.degreeUndergraduate
dc.identifier.cd600000194
dc.identifier.print-thesisTo be assigned
dc.identifier.urihttps://repository.northsouth.edu/handle/123456789/1295
dc.language.isoen
dc.publisherNorth South University
dc.rights©NSU Library
dc.titleVoids in phase change memory Nanodevices
oaire.citation.endPage32
oaire.citation.startPage1
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