Numerical Modeling of Noises in Phase Change Memory Nanoscale Devices

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dc.contributor.advisorNafisa Noor
dc.contributor.authorTasneem Mazhar
dc.contributor.id2012497043
dc.coverage.departmentElectrical and Computer Engineering
dc.date.accessioned2025-04-17
dc.date.accessioned2025-04-17T09:48:35Z
dc.date.available2025-04-17T09:48:35Z
dc.date.issued2023
dc.description.abstractPhase Change Memory(PCM) is an emerging non-volatile memory technology and arguably the most mature resistive memory technology to date. One crucial challenge of PCM devices is noise, with the most common type of noise being 1/f noise, which affects the electrical properties of PCM devices. Our primary objective is to model this 1/f noise and study its origins. A comprehensive understanding of how various parameters like temperature, defects, and applied voltage affect noise is imperative for the further development of PCM devices. In our project, we try to extensively find the origin of this 1/f noise from current research, and finally, as a future goal, we will conduct our experiments to find the origins of this noise.
dc.description.degreeUndergraduate
dc.identifier.cd600000495
dc.identifier.print-thesisTo be assigned
dc.identifier.urihttps://repository.northsouth.edu/handle/123456789/1130
dc.language.isoen
dc.publisherNorth South University
dc.rights© NSU Library
dc.titleNumerical Modeling of Noises in Phase Change Memory Nanoscale Devices
dc.typeThesis
oaire.citation.endPage36
oaire.citation.startPage1
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